BFP640H6327 Datasheet & Equivalents
NPN
SOT-343
General Purpose
Infineon
VCEO
4.1V
Ic Max
50mA
Pd Max
200mW
hFE Gain
110
Quick Reference
The BFP640H6327 is a NPN bipolar junction transistor in a SOT-343 package, manufactured by Infineon. It supports a breakdown voltage of 4.1V and continuous collector current of 50mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | SOT-343 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 4.1V | Max breakdown voltage |
| Collector Current (Ic) | 50mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 110 | Base signal amplification ratio |
| Transition Frequency (fT) | 42GHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 1.2V | Max emitter-base breakdown |
| Collector Cutoff Current | 40nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||