BD245 Datasheet & Equivalents

NPN TO-3P High Power SPTECH
VCEO
45V
Ic Max
10A
Pd Max
80W
hFE Gain
40

Quick Reference

The BD245 is a NPN bipolar junction transistor in a TO-3P package, manufactured by SPTECH. It supports a breakdown voltage of 45V and continuous collector current of 10A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)45VMax breakdown voltage
Collector Current (Ic)10AMax current handling
Power Dissipation (Pd)80WMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)3MHzMax operating frequency
Saturation Voltage (VCEsat)4VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current400uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD717 NPN TO-3P 50V 10A 240 80W
2SC3300 NPN TO-3P 50V 15A 360 60W
TIP3055 NPN TO-3P 60V 15A 70 90W
2SD1049 NPN TO-3P 80V 25A 20 80W
TIP33C NPN TO-3P 100V 10A 100 80W
TIP35CP NPN TO-3P 100V 25A 10 125W
TIP35C NPN TO-3P 100V 25A 75 125W