2SD717 Datasheet & Equivalents

NPN TO-3P High Power SPTECH
VCEO
50V
Ic Max
10A
Pd Max
80W
hFE Gain
240

Quick Reference

The 2SD717 is a NPN bipolar junction transistor in a TO-3P package, manufactured by SPTECH. It supports a breakdown voltage of 50V and continuous collector current of 10A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)10AMax current handling
Power Dissipation (Pd)80WMax thermal limit
DC Current Gain (hFE)240Base signal amplification ratio
Transition Frequency (fT)10MHzMax operating frequency
Saturation Voltage (VCEsat)400mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC3300 NPN TO-3P 50V 15A 360 60W
TIP3055 NPN TO-3P 60V 15A 70 90W
2SD1049 NPN TO-3P 80V 25A 20 80W
TIP33C NPN TO-3P 100V 10A 100 80W
TIP35C NPN TO-3P 100V 25A 75 125W
TIP35CP NPN TO-3P 100V 25A 10 125W
OSD1047 NPN TO-3P 120V 10A 160 100W
OSC5198 NPN TO-3P 120V 11A 160 120W
TIP35C NPN TO-3P 120V 11A 160 125W