BD236STU-HXY Datasheet & Equivalents
PNP
TO-126
General Purpose
HXY MOSFET
VCEO
60V
Ic Max
2A
Pd Max
1W
hFE Gain
-
Quick Reference
The BD236STU-HXY is a PNP bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 60V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 250@0.1A,2V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |