TTA008B,Q Datasheet & Equivalents
PNP
TO-126
General Purpose
TOSHIBA
VCEO
80V
Ic Max
2A
Pd Max
1.5W
hFE Gain
100
Quick Reference
The TTA008B,Q is a PNP bipolar junction transistor in a TO-126 package, manufactured by TOSHIBA. It supports a breakdown voltage of 80V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MJE172 | PNP | TO-126 | 80V | 3A | 250 | 12.5W | GOODWORK 📄 PDF |
| BD680ASTU-HXY | PNP | TO-126 | 80V | 4A | - | 2W | HXY MOSFET 📄 PDF |