BCX5510TA Datasheet & Equivalents

NPN SOT-89 General Purpose DIODES
VCEO
60V
Ic Max
1A
Pd Max
1.5W
hFE Gain
25

Quick Reference

The BCX5510TA is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCX55 NPN SOT-89 60V 1A 63 1.3W
BCX55 NPN SOT-89 60V 1A 63 500mW
BCX55-16 NPN SOT-89 60V 1A 100 1.3W
BCX55-16 NPN SOT-89 60V 1A 100 1.35W
Nexperia ๐Ÿ“„ PDF
115 NPN SOT-89 60V 1A 250 1.5W
HXY MOSFET ๐Ÿ“„ PDF
BCP55(SOT89-3L) NPN SOT-89 60V 1A 250 500mW
BCX55-16-JSM NPN SOT-89 60V 1A 600 500mW
TECH PUBLIC ๐Ÿ“„ PDF
2SD1616AG NPN SOT-89 60V 2A 120 500mW
2SD2391(RANGE:120-270) NPN SOT-89 60V 2A 390 500mW
2SD2391 NPN SOT-89 70V 2A 150 2W
DXTN26070CY-13 NPN SOT-89 80V 1A 25 1.5W
BCX5416TA NPN SOT-89 80V 1A 40 500mW
BCX56 NPN SOT-89 80V 1A 40 1.3W
BCX56-16 NPN SOT-89 80V 1A 40 500mW
BCX56-16 NPN SOT-89 80V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF
BCX56 NPN SOT-89 80V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF
115 NPN SOT-89 80V 1A 63 500mW
Nexperia ๐Ÿ“„ PDF
BCX56 NPN SOT-89 80V 1A 63 550mW
135 NPN SOT-89 80V 1A 63 550mW
BCX56-10 NPN SOT-89 80V 1A 100 1.35W
Nexperia ๐Ÿ“„ PDF