BCW66H Transistor Datasheet & Specifications

NPN BJT | LGE

NPNSOT-23General Purpose
VCEO
75V
Ic Max
800mA
Pd Max
330mW
Gain
630

Quick Reference

The BCW66H is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 75V breakdown voltage and 800mA continuous collector current. Download the BCW66H datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO75VBreakdown voltage
IC Max800mACollector current
Pd Max330mWPower dissipation
Gain630DC current gain
Frequency170MHzTransition speed
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400)NPNSOT-2360V500mA300mW
DNBT8105-7NPNSOT-2360V1A600mW
FMMT493ATANPNSOT-2360V1A500mW
BC846AQ-7-FNPNSOT-2365V100mA310mW
FMMT491TANPNSOT-2360V1A500mW
MMBTA06-7-FNPNSOT-2380V500mA350mW
MMBTA05LT1GNPNSOT-2360V500mA300mW
ZXTN2018FTANPNSOT-2360V5A1.56W
BC846ALT1GNPNSOT-2365V100mA225mW
BC846A-7-FNPNSOT-2365V100mA350mW