BCM857BS Datasheet & Equivalents
PNP
SOT-363
General Purpose
FUXINSEMI
VCEO
45V
Ic Max
200mA
Pd Max
300mW
hFE Gain
420
Quick Reference
The BCM857BS is a PNP bipolar junction transistor in a SOT-363 package, manufactured by FUXINSEMI. It supports a breakdown voltage of 45V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FUXINSEMI | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 45V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 420 | Base signal amplification ratio |
| Transition Frequency (fT) | 200MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 650mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 15nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BC857BDW | PNP | SOT-363 | 45V | 200mA | 400 | 300mW | FUXINSEMI 📄 PDF |
| BC857BS | PNP | SOT-363 | 45V | 200mA | 450 | 300mW | GOODWORK 📄 PDF |
| BC857BS | PNP | SOT-363 | 45V | 200mA | 300 | 300mW | FUXINSEMI 📄 PDF |
| BC857S | PNP | SOT-363 | 45V | 200mA | 630 | 300mW | HT(Shenzhen J... 📄 PDF |
| BC857BS | PNP | SOT-363 | 45V | 200mA | 630 | 300mW | YONGYUTAI 📄 PDF |