BC857BDW Datasheet & Equivalents

PNP SOT-363 General Purpose FUXINSEMI
VCEO
45V
Ic Max
200mA
Pd Max
300mW
hFE Gain
400

Quick Reference

The BC857BDW is a PNP bipolar junction transistor in a SOT-363 package, manufactured by FUXINSEMI. It supports a breakdown voltage of 45V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)45VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)400Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCM857BS PNP SOT-363 45V 200mA 420 300mW
FUXINSEMI ๐Ÿ“„ PDF
BC857BS PNP SOT-363 45V 200mA 450 300mW
GOODWORK ๐Ÿ“„ PDF
BCM857BS PNP SOT-363 45V 200mA 450 300mW
GOODWORK ๐Ÿ“„ PDF
BC857BS PNP SOT-363 45V 200mA 300 300mW
FUXINSEMI ๐Ÿ“„ PDF
BC857S PNP SOT-363 45V 200mA 630 300mW
HT(Shenzhen J... ๐Ÿ“„ PDF
BC857BS PNP SOT-363 45V 200mA 630 300mW
YONGYUTAI ๐Ÿ“„ PDF