BC856DW Datasheet & Equivalents

PNP SOT-363 General Purpose CBI
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
110

Quick Reference

The BC856DW is a PNP bipolar junction transistor in a SOT-363 package, manufactured by CBI. It supports a breakdown voltage of 65V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityPNPConfiguration
Collector-Emitter Voltage (VCEO)65VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)110Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current15nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
AD-BC856S PNP SOT-363 65V 100mA 110 0.2mW
BC856S PNP SOT-363 65V 100mA 110 200mW
BC856S(RANGE:110-475) PNP SOT-363 65V 100mA 110 200mW
BC856BS PNP SOT-363 65V 100mA 200 200mW
FUXINSEMI ๐Ÿ“„ PDF
BC856BDW1T1G-HYX PNP SOT-363 65V 100mA - 200mW
HXY MOSFET ๐Ÿ“„ PDF
HMMDT54017F PNP SOT-363 150V 200mA 50 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5401(RANGE:100-300) PNP SOT-363 150V 200mA 50 200mW
TPMMDT5401 PNP SOT-363 150V 200mA 50 200mW
TECH PUBLIC ๐Ÿ“„ PDF
MMDT5401 PNP SOT-363 150V 200mA 50 200mW
TECH PUBLIC ๐Ÿ“„ PDF
MMDT5401 PNP SOT-363 150V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5401 PNP SOT-363 150V 200mA 300 200mW