BC856BDW1T1G-HYX Datasheet & Equivalents

PNP SOT-363 General Purpose HXY MOSFET
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
-

Quick Reference

The BC856BDW1T1G-HYX is a PNP bipolar junction transistor in a SOT-363 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 65V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityPNPConfiguration
Collector-Emitter Voltage (VCEO)65VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)-Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)300mV@100mA,5mAVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current15nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
AD-BC856S PNP SOT-363 65V 100mA 110 0.2mW
BC856DW PNP SOT-363 65V 100mA 110 200mW
BC856S PNP SOT-363 65V 100mA 110 200mW
BC856S(RANGE:110-475) PNP SOT-363 65V 100mA 110 200mW
BC856BS PNP SOT-363 65V 100mA 200 200mW
FUXINSEMI ๐Ÿ“„ PDF
HMMDT54017F PNP SOT-363 150V 200mA 50 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5401(RANGE:100-300) PNP SOT-363 150V 200mA 50 200mW
TPMMDT5401 PNP SOT-363 150V 200mA 50 200mW
TECH PUBLIC ๐Ÿ“„ PDF
MMDT5401 PNP SOT-363 150V 200mA 50 200mW
TECH PUBLIC ๐Ÿ“„ PDF
MMDT5401 PNP SOT-363 150V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT5401 PNP SOT-363 150V 200mA 300 200mW