BC856BW Transistor Datasheet & Specifications

PNP BJT | DIODES

PNPSOT-323General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
350mW
Gain
125

Quick Reference

The BC856BW is a PNP bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BW datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max350mWPower dissipation
Gain125DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo200MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMST2907A-7-FPNPSOT-32360V600mA200mW
BC856AW-7-FPNPSOT-32365V100mA200mW
DSS5160U-7PNPSOT-32360V1A400mW
UMT2907AT106PNPSOT-32360V600mA200mW
MMBT2907AW_R1_00001PNPSOT-32360V600mA225mW
MMST2907AQ-7PNPSOT-32360V600mA200mW
BC856BWPNPSOT-32365V100mA350mW
2SA1576ARPNPSOT-32350V150mA200mW
BC856BWPNPSOT-32365V100mA350mW