BC856BW,115 Transistor Datasheet & Specifications

PNP BJT | Nexperia

PNPSOT-323General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
475
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Quick Reference

The BC856BW,115 is a PNP bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BW,115 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain475DC current gain
Frequency100MHzTransition speed
VCEsat75mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMST2907A-7-FPNPSOT-32360V600mA200mW
BC856AW-7-FPNPSOT-32365V100mA200mW
DSS5160U-7PNPSOT-32360V1A400mW
UMT2907AT106PNPSOT-32360V600mA200mW
MMBT2907AW_R1_00001PNPSOT-32360V600mA225mW
MMST2907AQ-7PNPSOT-32360V600mA200mW
2SA1576ARPNPSOT-32350V150mA200mW
BC856BWPNPSOT-32365V100mA350mW
BC856BWPNPSOT-32365V100mA350mW
View all SOT-323 PNP Transistors ›