APG046N01G MOSFET Datasheet & Specifications

N-Channel PDFN5x6-8L Logic-Level ALLPOWER
Vds Max
100V
Id Max
85A
Rds(on)
6.4mΩ@4.5V
Vgs(th)
3V

Quick Reference

The APG046N01G is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by ALLPOWER. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 85A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerALLPOWEROriginal Manufacturer
PackagePDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)85AMax current handling
Power Dissipation (Pd)56.8WMax thermal limit
On-Resistance (Rds(on))6.4mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)79nC@10VSwitching energy
Input Capacitance (Ciss)4.59nFInternal gate capacitance
Output Capacitance (Coss)1.06nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
S130N10LF N-Channel PDFN5x6-8L 100V 130A 4.5mΩ@10V 2.5V
ESAC80SN10 N-Channel PDFN5x6-8L 100V 92A 10mΩ@4.5V 2.6V
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