AOD603(XBLW) MOSFET Datasheet & Equivalents
P-Channel
TO-252-4L
Logic-Level
XBLW
Vds Max
60V
Id Max
20A
Rds(on)
34mΩ@10V
Vgs(th)
2.5V
Quick Reference
The AOD603(XBLW) is an P-Channel MOSFET in a TO-252-4L package, manufactured by XBLW. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XBLW | Original Manufacturer |
| Package | TO-252-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 34mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 19nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.08nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.027nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |