SP6026CTM MOSFET Datasheet & Specifications
P-Channel
TO-252-4L
Logic-Level
Siliup
Vds Max
60V
Id Max
20A;18A
Rds(on)
-
Vgs(th)
1.6V;1.5V
Quick Reference
The SP6026CTM is an P-Channel MOSFET in a TO-252-4L package, manufactured by Siliup. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A;18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TO-252-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A;18A | Max current handling |
| Power Dissipation (Pd) | 40W | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V;1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 20nC@10V;23nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.165nF;1.09nF | Internal gate capacitance |
| Output Capacitance (Coss) | 53pF;77pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||