A42 Datasheet & Equivalents
NPN
SOT-89
General Purpose
MSKSEMI
VCEO
305V
Ic Max
200mA
Pd Max
500mW
hFE Gain
100
Quick Reference
The A42 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by MSKSEMI. It supports a breakdown voltage of 305V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 305V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| A42(RANGE:100-300) | NPN | SOT-89 | 305V | 200mA | 100 | 500mW | JSCJ 📄 PDF |
| A44-2AF | NPN | SOT-89 | 400V | 200mA | 200 | 500mW | FOSAN 📄 PDF |
| FCX458TA | NPN | SOT-89 | 400V | 225mA | 100 | 2W | DIODES 📄 PDF |
| PBHV8540X | NPN | SOT-89 | 400V | 500mA | 100 | 520mW | Nexperia 📄 PDF |
| 115 | NPN | SOT-89 | 400V | 500mA | 85 | 1W | DIODES 📄 PDF |