PBHV8540X,115 Datasheet & Equivalents
NPN
SOT-89
General Purpose
Nexperia
VCEO
400V
Ic Max
500mA
Pd Max
520mW
hFE Gain
100
Quick Reference
The PBHV8540X,115 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by Nexperia. It supports a breakdown voltage of 400V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 400V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 520mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 30MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 135mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |