ZXTN618MATA Transistor Datasheet & Specifications
NPN
DFN-3(2x2)
High Power
DIODES
VCEO
20V
Ic Max
4.5A
Pd Max
12W
hFE Gain
200
Quick Reference
The ZXTN618MATA is a NPN bipolar transistor in a DFN-3(2x2) package by DIODES. This datasheet provides complete specifications including 20V breakdown voltage and 4.5A continuous collector current. Download the ZXTN618MATA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3(2x2) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 4.5A | Collector current |
| Pd | 12W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 115mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| DXTN5840CFDB-7 | NPN | DFN-3(2x2) | 40V | 5A | 1.25W |