DXTN5840CFDB-7 Transistor Datasheet & Specifications
NPN
DFN-3(2x2)
General Purpose
DIODES
VCEO
40V
Ic Max
5A
Pd Max
1.25W
hFE Gain
200
Quick Reference
The DXTN5840CFDB-7 is a NPN bipolar transistor in a DFN-3(2x2) package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 5A continuous collector current. Download the DXTN5840CFDB-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3(2x2) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |