ZXTN25012EFHTA Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
DIODES
VCEO
12V
Ic Max
6A
Pd Max
1.25W
hFE Gain
500
Quick Reference
The ZXTN25012EFHTA is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 12V breakdown voltage and 6A continuous collector current. Download the ZXTN25012EFHTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 12V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 500 | hFE / Beta |
| Frequency | 260MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTN23015CFHTA | NPN | SOT-23 | 15V | 9A | 1.25W |
| MMBT5550LT3G | NPN | SOT-23 | 140V | 600nA | 225mW |