TPLBTN560Y3T1G Transistor Datasheet & Specifications
NPN
SOT-89-3
General Purpose
TECH PUBLIC
VCEO
60V
Ic Max
5.2A
Pd Max
500mW
hFE Gain
-
Quick Reference
The TPLBTN560Y3T1G is a NPN bipolar transistor in a SOT-89-3 package by TECH PUBLIC. This datasheet provides complete specifications including 60V breakdown voltage and 5.2A continuous collector current. Download the TPLBTN560Y3T1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-89-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 5.2A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 35mV@0.5A,0.05A | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PBSS304NX | NPN | SOT-89-3 | 60V | 5.2A | 500mW |
| TPBT60N5T3 | NPN | SOT-89-3 | 60V | 5.2A | 500mW |
| TPZXTN19055DZTA | NPN | SOT-89-3 | 60V | 5.2A | 500mW |
| 2SC5566-TP | NPN | SOT-89-3 | 60V | 5.2A | 500mW |