TPBT60N5T3 Transistor Datasheet & Specifications

NPN SOT-89-3 General Purpose TECH PUBLIC
VCEO
60V
Ic Max
5.2A
Pd Max
500mW
hFE Gain
-

Quick Reference

The TPBT60N5T3 is a NPN bipolar transistor in a SOT-89-3 package by TECH PUBLIC. This datasheet provides complete specifications including 60V breakdown voltage and 5.2A continuous collector current. Download the TPBT60N5T3 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-89-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic5.2ACollector current
Pd500mWPower dissipation
DC Current Gain-hFE / Beta
Frequency30MHzTransition speed (fT)
VCEsat35mV@0.5A,0.05ASaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
PBSS304NX NPN SOT-89-3 60V 5.2A 500mW
TPZXTN19055DZTA NPN SOT-89-3 60V 5.2A 500mW
TPLBTN560Y3T1G NPN SOT-89-3 60V 5.2A 500mW
2SC5566-TP NPN SOT-89-3 60V 5.2A 500mW