SS8550(SOT89-3L) Transistor Datasheet & Specifications

PNP SOT-89-3L General Purpose HXY MOSFET
VCEO
25V
Ic Max
1.5A
Pd Max
500mW
hFE Gain
400

Quick Reference

The SS8550(SOT89-3L) is a PNP bipolar transistor in a SOT-89-3L package by HXY MOSFET. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the SS8550(SOT89-3L) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd500mWPower dissipation
DC Current Gain400hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
B772(RANGE:200-400) PNP SOT-89-3L 30V 3A 500mW
DXT751-13 PNP SOT-89-3L 60V 3A 1W
B772(RANGE:160-320) PNP SOT-89-3L 30V 3A 500mW
2SB1561 PNP SOT-89-3L 60V 3A 2W
DXT751 PNP SOT-89-3L 60V 3A 1W
PXT8550(RANGE:200-350) PNP SOT-89-3L 25V 1.5A 500mW
2SA1213Y-2AF PNP SOT-89-3L 50V 2A 500mW
B772 PNP SOT-89-3L 30V 3A 500mW
B772 PNP SOT-89-3L 30V 3A 500mW
B772Y-2AF PNP SOT-89-3L 30V 3A 500mW