SS8050W Transistor Datasheet & Specifications

NPN SOT-323 General Purpose MSKSEMI
VCEO
25V
Ic Max
1.5A
Pd Max
250mW
hFE Gain
120

Quick Reference

The SS8050W is a NPN bipolar transistor in a SOT-323 package by MSKSEMI. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the SS8050W datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd250mWPower dissipation
DC Current Gain120hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
SS8050W NPN SOT-323 25V 1.5A 200mW
SS8050W NPN SOT-323 25V 1.5A 200mW
SS8050(RANGE:200-350) NPN SOT-323 25V 1.5A 250mW
SS8050W NPN SOT-323 25V 1.5A 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW
SS8050W NPN SOT-323 25V 1.5A 250mW