SS8050W Transistor Datasheet & Specifications

NPN SOT-323 General Purpose CBI
VCEO
25V
Ic Max
1.5A
Pd Max
200mW
hFE Gain
400

Quick Reference

The SS8050W is a NPN bipolar transistor in a SOT-323 package by CBI. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the SS8050W datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd200mWPower dissipation
DC Current Gain400hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
SS8050W NPN SOT-323 25V 1.5A 200mW
SS8050W NPN SOT-323 25V 1.5A 200mW
SS8050(RANGE:200-350) NPN SOT-323 25V 1.5A 250mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW
SS8050W NPN SOT-323 25V 1.5A 250mW
SS8050W NPN SOT-323 25V 1.5A 250mW