S8050T Transistor Datasheet & Specifications

NPN SOT-523 General Purpose GOODWORK
VCEO
25V
Ic Max
500mA
Pd Max
200mW
hFE Gain
-

Quick Reference

The S8050T is a NPN bipolar transistor in a SOT-523 package by GOODWORK. This datasheet provides complete specifications including 25V breakdown voltage and 500mA continuous collector current. Download the S8050T datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic500mACollector current
Pd200mWPower dissipation
DC Current Gain-hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat600mV@500mA,50mASaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401T-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT NPN SOT-523 40V 600mA 150mW
S8050 NPN SOT-523 25V 500mA 200mW
MMBT2222AT-JSM NPN SOT-523 40V 600mA 150mW
S8050T NPN SOT-523 25V 500mA 300mW
HMMBT5551T NPN SOT-523 160V 600mA 300mW
MMBT5551T NPN SOT-523 160V 600mA 200mW
S8050T NPN SOT-523 25V 500mA 265mW
MMBT2222AT NPN SOT-523 40V 600mA 150mW