PZTA29 Transistor Datasheet & Specifications
NPN
SOT-223-4
General Purpose
onsemi
VCEO
100V
Ic Max
800mA
Pd Max
1W
hFE Gain
10000
Quick Reference
The PZTA29 is a NPN bipolar transistor in a SOT-223-4 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 800mA continuous collector current. Download the PZTA29 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223-4 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 10000 | hFE / Beta |
| Frequency | 125MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃@(Tj) | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZX5T853GTA | NPN | SOT-223-4 | 100V | 6A | 3W |