ZX5T853GTA Transistor Datasheet & Specifications

NPN SOT-223-4 High Power DIODES
VCEO
100V
Ic Max
6A
Pd Max
3W
hFE Gain
30
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Quick Reference

The ZX5T853GTA is a NPN bipolar transistor in a SOT-223-4 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 6A continuous collector current. Download the ZX5T853GTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223-4Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic6ACollector current
Pd3WPower dissipation
DC Current Gain30hFE / Beta
Frequency130MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current20nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-223-4 NPN Transistors ›