PN2907ATF Transistor Datasheet & Specifications
PNP
TO-92-3L
General Purpose
onsemi
VCEO
60V
Ic Max
800mA
Pd Max
625mW
hFE Gain
100
Quick Reference
The PN2907ATF is a PNP bipolar transistor in a TO-92-3L package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 800mA continuous collector current. Download the PN2907ATF datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BC638TA | PNP | TO-92-3L | 60V | 1A | 1W |