BC638TA Transistor Datasheet & Specifications
PNP
TO-92-3L
General Purpose
onsemi
VCEO
60V
Ic Max
1A
Pd Max
1W
hFE Gain
25
Quick Reference
The BC638TA is a PNP bipolar transistor in a TO-92-3L package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the BC638TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65โ~+150โ | Operating temp |