NSVBCW68GLT1G-HXY Transistor Datasheet & Specifications
PNP
SOT-23
General Purpose
HXY MOSFET
VCEO
60V
Ic Max
1A
Pd Max
250mW
hFE Gain
300
Quick Reference
The NSVBCW68GLT1G-HXY is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the NSVBCW68GLT1G-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 250mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP25100BFHTA | PNP | SOT-23 | 100V | 2A | 1.25W |
| PBSS5160T,215 | PNP | SOT-23 | 60V | 1A | 400mW |
| FMMT591TA | PNP | SOT-23 | 60V | 1A | 500mW |
| FMMT591 | PNP | SOT-23 | 60V | 1A | 500mW |
| DPBT8105-7 | PNP | SOT-23 | 60V | 1A | 600mW |
| DPLS160-7 | PNP | SOT-23 | 60V | 1A | 300mW |
| NSV60200LT1G | PNP | SOT-23 | 60V | 2A | 540mW |
| FMMT591 | PNP | SOT-23 | 60V | 1A | 250mW |
| FMMT591 | PNP | SOT-23 | 60V | 1A | 500mW |
| 2PB710ARL-HXY | PNP | SOT-23 | 60V | 1A | 250mW |