NSV60200LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
60V
Ic Max
2A
Pd Max
540mW
hFE Gain
150

Quick Reference

The NSV60200LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the NSV60200LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic2ACollector current
Pd540mWPower dissipation
DC Current Gain150hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat95mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
ZXTP2029FTA PNP SOT-23 100V 3A 1.56W
NSS1C200LT1G PNP SOT-23 100V 2A 710mW
S-LBSS5240LT1G PNP SOT-23 140V 2A 300mW
ZXTP25060BFHTA PNP SOT-23 60V 3A 1.25W