NSS1C200LT1G Transistor Datasheet & Specifications
PNP
SOT-23
General Purpose
onsemi
VCEO
100V
Ic Max
2A
Pd Max
710mW
hFE Gain
360
Quick Reference
The NSS1C200LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the NSS1C200LT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 710mW | Power dissipation |
| DC Current Gain | 360 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 115mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP25100BFHTA | PNP | SOT-23 | 100V | 2A | 1.25W |
| ZXTP2029FTA | PNP | SOT-23 | 100V | 3A | 1.56W |
| S-LBSS5240LT1G | PNP | SOT-23 | 140V | 2A | 300mW |