NSV1C301ET4G Transistor Datasheet & Specifications
NPN
DPAK-3
High Power
onsemi
VCEO
100V
Ic Max
3A
Pd Max
2.1W
hFE Gain
200
Quick Reference
The NSV1C301ET4G is a NPN bipolar transistor in a DPAK-3 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the NSV1C301ET4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD31C-13 | NPN | DPAK-3 | 100V | 3A | 15W |