MJD31C-13 Transistor Datasheet & Specifications
NPN
DPAK-3
High Power
DIODES
VCEO
100V
Ic Max
3A
Pd Max
15W
hFE Gain
25
Quick Reference
The MJD31C-13 is a NPN bipolar transistor in a DPAK-3 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31C-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DPAK-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 1.2V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NSV1C301ET4G | NPN | DPAK-3 | 100V | 3A | 2.1W |