NJW3281G-OSEN Transistor Datasheet & Specifications
NPN
TO-3PNB
High Power
OSEN
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
160
Quick Reference
The NJW3281G-OSEN is a NPN bipolar transistor in a TO-3PNB package by OSEN. This datasheet provides complete specifications including 250V breakdown voltage and 16A continuous collector current. Download the NJW3281G-OSEN datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | OSEN | Original Manufacturer |
| Package | TO-3PNB | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 1.4V | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJW1302G-OSEN | NPN | TO-3PNB | 250V | 16A | 200W |
| NJW21194G | NPN | TO-3PNB | 250V | 16A | 200W |