NJW21194G Transistor Datasheet & Specifications
NPN
TO-3PNB
High Power
OSEN
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
160
Quick Reference
The NJW21194G is a NPN bipolar transistor in a TO-3PNB package by OSEN. This datasheet provides complete specifications including 250V breakdown voltage and 16A continuous collector current. Download the NJW21194G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | OSEN | Original Manufacturer |
| Package | TO-3PNB | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 1.4V | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJW1302G-OSEN | NPN | TO-3PNB | 250V | 16A | 200W |
| NJW3281G-OSEN | NPN | TO-3PNB | 250V | 16A | 200W |