NJW21193G Transistor Datasheet & Specifications
PNP
TO-3P
High Power
onsemi
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
20
Quick Reference
The NJW21193G is a PNP bipolar transistor in a TO-3P package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 16A continuous collector current. Download the NJW21193G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 20 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 1.4V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA1962OTU | PNP | TO-3P | 250V | 17A | 130W |