2SA1962OTU Transistor Datasheet & Specifications

PNP TO-3P High Power onsemi
VCEO
250V
Ic Max
17A
Pd Max
130W
hFE Gain
55
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Quick Reference

The 2SA1962OTU is a PNP bipolar transistor in a TO-3P package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 17A continuous collector current. Download the 2SA1962OTU datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO250VBreakdown voltage
Ic17ACollector current
Pd130WPower dissipation
DC Current Gain55hFE / Beta
Frequency30MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current5uALeakage (ICBO)
Temp-50℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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