NJW0281G Transistor Datasheet & Specifications
NPN
TO-3P
High Power
onsemi
VCEO
250V
Ic Max
15A
Pd Max
150W
hFE Gain
75
Quick Reference
The NJW0281G is a NPN bipolar transistor in a TO-3P package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 15A continuous collector current. Download the NJW0281G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 150W | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |