NJW21194G Transistor Datasheet & Specifications

NPN TO-3P High Power onsemi
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
20
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Quick Reference

The NJW21194G is a NPN bipolar transistor in a TO-3P package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 16A continuous collector current. Download the NJW21194G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO250VBreakdown voltage
Ic16ACollector current
Pd200WPower dissipation
DC Current Gain20hFE / Beta
Frequency4MHzTransition speed (fT)
VCEsat4VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-65℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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