NJVMJD32CT4G-VF01 Transistor Datasheet & Specifications
PNP
DPAK
High Power
onsemi
VCEO
100V
Ic Max
3A
Pd Max
15W
hFE Gain
10
Quick Reference
The NJVMJD32CT4G-VF01 is a PNP bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the NJVMJD32CT4G-VF01 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 10 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |