MJD128T4G Transistor Datasheet & Specifications
PNP
DPAK
High Power
onsemi
VCEO
120V
Ic Max
8A
Pd Max
1.75W
hFE Gain
-
Quick Reference
The MJD128T4G is a PNP bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 120V breakdown voltage and 8A continuous collector current. Download the MJD128T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 120V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1.75W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 1000@4V,4A | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃@(Tj) | Operating temp |