NJV4031NT3G Transistor Datasheet & Specifications
NPN
SOT-223-3
High Power
onsemi
VCEO
40V
Ic Max
3A
Pd Max
2W
hFE Gain
200
Quick Reference
The NJV4031NT3G is a NPN bipolar transistor in a SOT-223-3 package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 3A continuous collector current. Download the NJV4031NT3G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 215MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTN19100CGTA | NPN | SOT-223-3 | 100V | 5.5A | 3W |