ZXTN19100CGTA Transistor Datasheet & Specifications

NPN SOT-223-3 High Power DIODES
VCEO
100V
Ic Max
5.5A
Pd Max
3W
hFE Gain
130
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Quick Reference

The ZXTN19100CGTA is a NPN bipolar transistor in a SOT-223-3 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 5.5A continuous collector current. Download the ZXTN19100CGTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic5.5ACollector current
Pd3WPower dissipation
DC Current Gain130hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat65mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-223-3 NPN Transistors ›