NJT4030PT1G Transistor Datasheet & Specifications

PNP SOT-223 General Purpose onsemi
VCEO
40V
Ic Max
3A
Pd Max
2W
hFE Gain
220

Quick Reference

The NJT4030PT1G is a PNP bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 3A continuous collector current. Download the NJT4030PT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic3ACollector current
Pd2WPower dissipation
DC Current Gain220hFE / Beta
Frequency160MHzTransition speed (fT)
VCEsat150mVSaturation voltage
Vebo40VEmitter-Base voltage
Cutoff Current6nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT951QTA PNP SOT-223 60V 5A 3W
ZX5T951GTA PNP SOT-223 60V 5.5A 3W
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
DPLS350E-13 PNP SOT-223 50V 3A 1W
STN951 PNP SOT-223 60V 5A 1.6W
DSS60600MZ4-13 PNP SOT-223 60V 6A 2W
FZT1151ATA PNP SOT-223 40V 3A 3W
ZX5T1951GTA PNP SOT-223 60V 6A 3W
ZX5T955GTA PNP SOT-223 140V 4A 3W