MMDT3904V Transistor Datasheet & Specifications

NPN SOT-563 General Purpose YANGJIE
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The MMDT3904V is a NPN bipolar transistor in a SOT-563 package by YANGJIE. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMDT3904V datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-563Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd200mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DSS4140V-7 NPN SOT-563 40V 1A 600mW
TPMMDT3904V NPN SOT-563 40V 200mA 150mW
MMDT3904V NPN SOT-563 40V 200mA 200mW
DSS4160V-7 NPN SOT-563 60V 1A 600mW
ZXTN26070CV-7 NPN SOT-563 70V 2A 1W
MMDT3904V NPN SOT-563 40V 200mA 150mW