DSS4140V-7 Transistor Datasheet & Specifications
NPN
SOT-563
General Purpose
DIODES
VCEO
40V
Ic Max
1A
Pd Max
600mW
hFE Gain
200
Quick Reference
The DSS4140V-7 is a NPN bipolar transistor in a SOT-563 package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 1A continuous collector current. Download the DSS4140V-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 600mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 190mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| DSS4160V-7 | NPN | SOT-563 | 60V | 1A | 600mW |
| ZXTN26070CV-7 | NPN | SOT-563 | 70V | 2A | 1W |