MMBTA92-MS Transistor Datasheet & Specifications

PNP SOT-23 General Purpose MSKSEMI
VCEO
300V
Ic Max
200mA
Pd Max
300mW
hFE Gain
200

Quick Reference

The MMBTA92-MS is a PNP bipolar transistor in a SOT-23 package by MSKSEMI. This datasheet provides complete specifications including 300V breakdown voltage and 200mA continuous collector current. Download the MMBTA92-MS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic200mACollector current
Pd300mWPower dissipation
DC Current Gain200hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current250nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA92 PNP SOT-23 300V 500mA 300mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
MMBTA92(RANGE:100-200) PNP SOT-23 300V 200mA 300mW
MMBTA92-7-F PNP SOT-23 300V 500mA 300mW
MMBTA94 PNP SOT-23 400V 200mA 350mW
MMBTA94 PNP SOT-23 400V 200mA 350mW
MMBTA94-6AF PNP SOT-23 400V 200mA 350mW
BFN27E6327HTSA1 PNP SOT-23 300V 200mA 360mW
MMBTA92 PNP SOT-23 300V 200mA 300mW